Publications

Journal and book publications

2021 (2 Book Chapter, mit CRIS abgeglichen)

  1. Ulrike Künecke U., Schuster M., Wellmann P. (2021). Analysis of compositional gradients in Cu(In,Ga)(S,Se)2 solar cell absorbers using energy dispersive x-ray analysis with different acceleration energies. Materials. https://doi.org/10.3390/ma14112861
  2. Michael Schöler M., Francesco La Via F. , Marco Mauceri M., Wellmann P. (2021). Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substrates. Crystal Growth and Design. https://doi.org/10.1021/acs.cgd.1c00343
  3. La Via F., Zimbone M., Bongiorno C., La Magna A., Fisicaro G., Deretzis I., Scuderi V., Calabretta C., Giannazzo F., Zielinski M., Anzalone R., Mauceri M., Crippa D., Scalise E., Marzegalli A., Sarikov A., Miglio L., Jokubavicius V., Syväjärvi M., Yakimova R., Schuh P., Schöler M., Kollmuss M., Wellmann P. (2021). New approaches and understandings in the growth of cubic silicon carbide. Materials. https://doi.org/10.3390/ma14185348
  4. Schimmel S., Wellmann P. (2021). In Situ Visualization of the Ammonothermal Crystallization Process by X-ray Technology. In: Meissner E., Niewa R. (eds) Ammonothermal Synthesis and Crystal Growth of Nitrides. Springer Series in Materials Science, vol 304. Springer, Cham. https://doi.org/10.1007/978-3-030-56305-9_10
  5. Schlücker E., Hertweck B., Schimmel S., Wellmann P. (2021). Special Equipment for Ammonothermal Processes. In: Meissner E., Niewa R. (eds) Ammonothermal Synthesis and Crystal Growth of Nitrides. Springer Series in Materials Science, vol 304. Springer, Cham. https://doi.org/10.1007/978-3-030-56305-9_17

 

2021 (1 Edited Book, mit CRIS abgeglichen)

  1. Peter Wellmann (Editor), Noboru Ohtani (Editor), Roland Rupp (Editor) (2021). Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications, Wiley-VCH; 1. edition (2 Jun. 2021, ISBN-10 : 3527346716, ISBN-13 : 978-3527346714

 

2021 Invited article (without peer review)

  1. Peter Wellmann, Michael Schöler, Philipp Schuh, Mike Jennings, Fan Li, Roberta Nipoti, Andrea Severino, Ruggero Anzalone, Fabrizio Roccaforte, Massimo Zimbone, Francesco La Via (2021). Status of 3C-SiC growth and device technology, In: Peter Wellmann (Editor), Noboru Ohtani (Editor), Roland Rupp (Editor) (2021). Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications, Wiley-VCH; 1. edition (2 Jun. 2021, ISBN-10 : 3527346716, ISBN-13 : 978-3527346714

 

2020 (8 Journal Articles, 1 Poster, mit CRIS abgeglichen)

  1. Arzig, M., Salamon, M., Hsiao, T.C., Uhlmann, N., & Wellmann, P. (2020). Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals. Journal of Crystal Growth, 532. https://dx.doi.org/10.1016/j.jcrysgro.2019.125436
  2. Danilewsky, A., Wellmann, P., & Miller, W. (2020). The 50th Anniversary of the German Association for Crystal Growth, DGKK. Crystal Research and Technology, 55(2). https://dx.doi.org/10.1002/crat.202000009
  3. Nguyen, B.D., Rausch, A., Steiner, J., Wellmann, P., & Sandfeld, S. (2020). On the importance of dislocation flow in continuum plasticity models for semiconductor materials. Journal of Crystal Growth, 532. https://dx.doi.org/10.1016/j.jcrysgro.2019.125414
  4. Schimmel, S., Kobelt, I., Heinlein, L., Kimmel, A.-C., Steigerwald, T., Schlücker, E., & Wellmann, P. (2020). Flow stability, convective heat transfer and chemical reactions in ammonothermal autoclaves—insights by in situ measurements of fluid temperatures. Crystals, 10(9), 1-18. https://dx.doi.org/10.3390/cryst10090723
  5. Schöler, M., Lederer, M., Schuh, P., & Wellmann, P. (2020). Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters. physica status solidi (b), 2020, 257, 1900286. https://dx.doi.org/10.1002/pssb.201900286
  6. Steiner, J., Arzig, M., Denisov, A., & Wellmann, P. (2020). Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results. Crystal Research and Technology. https://dx.doi.org/10.1002/crat.201900121
  7. Sytnyk, M., Yousefi-Amin, A.A., Freund, T., Prihoda, A., Götz, K., Unruh, T., Harreiß C, Will J, Spiecker E, Levchuk J, Osvet A, Brabec C, Künecke U, Wellmann P, Volobuev VV, Korczak J, Szczerbakow A, Story T, Simbrunner C, Springholz G, Wechsler D, Lytken O, Lotter S, Kampmann F, Maultzsch J, Singh K, Voznyy O, Heiß, W. (2020). Epitaxial Metal Halide Perovskites by Inkjet-Printing on Various Substrates. Advanced Functional Materials, 30(43). https://dx.doi.org/10.1002/adfm.202004612
  8. Weber, A., Lechner, R., Grünsteidl, S., Borowski, P., Schubbert, C., Dalibor, T., Heise SJ, Ohland J, Savchenko I, Ahmed H, Hirwa H, Parisi J, Klenk R, Reyes-Figueroa P, Farias Basulto G, Aghaei M, Ulbrich C, Waack E, Hock R, Dallmann J, Künecke U, Schuster M, & Wellmann, P. (2020). Investigating and Improving Performance Ratio of Cu(In,Ga)(S,Se)2 Photovoltaic Devices. Poster presentation at EU PVSEC, Marseille, FR.
  9. J. Wellmann, P. Schuh, M. Kollmuss, M. Schöler, J. Steiner, M. Zielinski, M. Mauceri, F. La Via (2020), Prospects of bulk growth of 3C-SiC using sublimation growth , Materials Science Forum (pp. 113-119). http://dx.doi.org/10.4028/www.scientific.net/MSF.1004.113

 

2020 Invited article (without peer review)

  1. Wellmann, P. (2020). Perfect materials as the base for technical innovation. The Innovation Platform, 4, 82-85. https://www.innovationnewsnetwork.com/the-innovation-platform/

 

2019 (19 Journal Articles, 1 Tagungsbeitrag, mit CRIS abgeglichen)

  1. Arzig, M., Steiner, J., Salamon, M., Uhlmann, N., & Wellmann, P. (2019). Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystals. Materials, 12(16), 2591. https://dx.doi.org/10.3390/ma12162591
  2. Arzig, M., Salamon, M., Uhlmann, N. and Wellmann, P. J. (2019), Investigation of the Growth Kinetics of SiC Crystals during Physical Vapor Transport Growth by the Application of In‐Situ 3D Computed Tomography Visualization. Advanced Engineering Materials. https://dx.doi.org/10.1002/adem.201900778
  3. Arzig, M., Salamon, M., Uhlmann, N., & Wellmann, P. (2019). Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setup. Materials Science Forum, 963, 14-17. https://dx.doi.org/10.4028/www.scientific.net/MSF.963.14
  4. Ellefsen, O.M., Arzig, M., Steiner, J., Wellmann, P., & Runde, P. (2019). Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules. Materials, 12(19). https://dx.doi.org/10.3390/ma12193272
  5. Salamon, M., Arzig, M. , Uhlmann, N. and Wellmann, P. J. (2019), Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography. Materials Science Forum, 963, 5-9. https://doi.org/10.4028/www.scientific.net/MSF.963.5
  6. Salamon, M., Arzig, M., Wellmann, P., & Uhlmann, N. (2019). Comparison of achievable contrast features in computed tomography observing the growth of a 4H-SiC bulk crystal. Materials, 12(22), 3652. https://dx.doi.org/10.3390/ma12223652
  7. Salamon, M., Arzig, M., Wellmann, P., & Uhlmann, N. (2019). Three-dimensional in-situ growth surveillance of bulky SiC crystals. In German Society for Non-Destructive Testing (DGZfP) (Eds.), Proceedings of the DIR Fürth, DE: German Society for Non-Destructive Testing (DGZfP).
  8. Schöler, M., Lederer, M., Schuh, P., & Wellmann, P. (2019). Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide. https://arxiv.org/abs/1906.07433
  9. Schöler, M., Schuh, P., Steiner, J., Wellmann, P. (2019). Modeling of the PVT Growth Process of Bulk 3C-SiC – Growth Process Development and Challenge of the Right Materials Data Base. Materials Science Forum, 963, 157-160. https://doi.org/10.4028/www.scientific.net/MSF.963.157
  10. Schöler, M., Brecht, C., & Wellmann, P. (2019). Annealing-induced changes in the nature of point defects in sublimation-grown cubic silicon carbide. Materials, 12(15), 2487. https://dx.doi.org/10.3390/ma12152487
  11. Schöler, M., Lederer, M., & Wellmann, P. (2019). Deep electronic levels in n-type and p-type 3C-SiC. Materials Science Forum 963, 297-300. http://dx.doi.org/10.4028/www.scientific.net/MSF.963.297
  12. Schuh, P., Künecke, U., Litrico, G., Mauceri, M., La Via, F., Monnoye, S.,… Wellmann, P. (2019). Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates. Materials Science Forum, 963, 149-152. https://dx.doi.org/10.4028/www.scientific.net/MSF.963.149
  13. Schuh, P., Steiner, J., La Via, F., Mauceri, M., Zielinski, M., & Wellmann, P. (2019). Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks. Materials, 12(15), 2353. https://dx.doi.org/10.3390/ma12152353
  14. Schuh, P., La Via, F., Mauceri, M., Zielinski, M., & Wellmann, P. (2019). Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth. Materials, 12(13), 2179. https://dx.doi.org/10.3390/ma12132179
  15. Schuster, M., Stapf, D., Osterrieder, T., Barthel, V., & Wellmann, P. (2019). Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure. Coatings, 9, 1-16. https://dx.doi.org/10.3390/coatings9080484
  16. Steiner, J., Roder, M., Nguyen, B.D., Sandfeld, S., Danilewsky, A., & Wellmann, P. (2019). Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC. Materials, 12(13), 2207. https://dx.doi.org/10.3390/ma12132207
  17. Steiner, J., Arzig, M., Hsiao, T.C., & Wellmann, P. (2019). Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules. Materials Science Forum, 963, 42-45. http://dx.doi.org/10.4028/www.scientific.net/MSF.963.42
  18. Tarekegne, A.T., Norrman, K., Jokubavicius, V., Syväjärvi, M., Schuh, P., Wellmann, P., & Ou, H. (2019). Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC. Applied Physics B-Lasers and Optics, 125(9). https://dx.doi.org/10.1007/s00340-019-7279-8
  19. Hassanien, A.E., Abdelhaleem, S., Ahmad, R., Schuster, M., Moustafa, S.H., Distaso, M.,… Wellmann, P. (2019). Effect of Fast Annealing on Structural Characteristics and Optical Properties of Cu2ZnSnS4 Absorber Films Deposited by Doctor-Blade Technique. Journal of Nanoelectronics and Optoelectronics, 14(10), 1394-1400. https://dx.doi.org/10.1166/jno.2019.2633
  20. Lin, L., Ou, Y., Jokubavicius, V., Syväjärvi, M., Liang, M., Liu, Z., Yi, X., Schuh, P., Wellmann, P., Herstrøm, B., Jensen, F. & Ou, H. (2019). An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. Materials Science in Semiconductor Processing, 91, 9-12. https://dx.doi.org/https://doi.org/10.1016/j.mssp.2018.10.028

 

2019

  1. Peter J. Wellmann (2019), Supporting materials science & engineering in Europe, SciTech Europa Quarterly 33.

 

2019 (1 Edited Volume, mit CRIS abgeglichen)

  1. Wellmann, P., La Via, F., & Jennings, M. (Eds.) (2019). Silicon Carbide and Related Materials for Energy Saving Applications—Select Papers from E-MRS 2019—Symposium “Silicon Carbide and Related Materials for Energy Saving Applications”.

 

2018 (Mit CRIS abgeglichen)

  1. Arzig, M, Hsiao, T., &. Wellmann, P. (2018). Optimization of the SiC powder source size distribution for the sublimation growth of long crystal boules. Advanced Materials Proceedings, 3(9), 540-543. https://dx.doi.org/ 5185/amp.2018/1414
  2. Wellmann, P. (2018). Review of SiC crystal growth technology. Semiconductor Science and Technology, 33(10), 1-21. https://dx.doi.org/10.1088/1361-6641/aad831
  3. Arzig, M., Salamon, M., Uhlmann, N., Johansen, B.A., & Wellmann, P. (2018). Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules. Materials Science Forum, 924, 245-248. https://dx.doi.org/10.4028/www.scientific.net/MSF.924.245
  4. Fahlbusch, L., & Wellmann, P. (2018). Solution Growth of Silicon Carbide Using the Vertical Bridgman Method. Crystal Research and Technology. https://dx.doi.org/10.1002/crat.201800019
  5. La Via, F., Severino, A., Anzalone, R., Bongiorno, C., Litrico, G., Mauceri, M., Schöler, M., Schuh, P. & Wellmann, P. (2018). From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction. Materials Science in Semiconductor Processing, 78, 57-68. https://dx.doi.org/10.1016/j.mssp.2017.12.012
  6. Schimmel, S., Duchstein, P., Steigerwald, T., Kimmel, A.-C., Schlücker, E., Zahn, D.,… Wellmann, P. (2018). In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN. Journal of Crystal Growth, 498, 214-223. https://dx.doi.org/10.1016/j.jcrysgro.2018.06.024
  7. Schuster, M., Sisterhenn, P., Graf, L., & Wellmann, P. (2018). Processing and Characterization of Vacuum-Free CuInSe2 Thin Films from Nanoparticle-Precursors using Novel Temperature Treatment Techniques. International Journal of Nanoparticle Research, 2(4). http://escipub.com/ijnr-2017-12-1501/
  8. Abdelhaleem, S., Hassanien, A., Ahmad, R., Schuster, M., Ashour, A., Distaso, M., Peukert W. & Wellmann, P. (2018). Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Technique. Journal of Electronic Materials. https://dx.doi.org/10.1007/s11664-018-6636-4

 

2017 (Mit CRIS abgeglichen)

  1. Häusler, J., Schimmel, S., Wellmann, P., & Schnick, W. (2017). Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging. Chemistry-A European Journal, 23(50), 12275-12282. https://dx.doi.org/10.1002/chem.201701081
  2. Schimmel, S., Koch, M., Macher, P., Kimmel, A.-C., Steigerwald, T., Alt, N., Schlücker, E. & Wellmann, P. (2017). Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers. Journal of Crystal Growth, 479, 59-66. https://dx.doi.org/10.1016/j.jcrysgro.2017.09.027
  3. Schöler, M., Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers. Advanced Materials Proceedings, 2(12), 774-778. https://dx.doi.org/10.5185/amp.2017/419
  4. Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). 3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers. Materials Science Forum, 897, 15-18. https://dx.doi.org/10.4028/www.scientific.net/MSF.897.15
  5. Schuh, P., Arzig, M., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). Growing bulk-like 3C-SiC from seeding material produced by CVD. Physica Status Solidi (A) Applications and Materials Science. https://dx.doi.org/10.1002/pssa.201600429
  6. Schuh, P., Schöler, M., Wilhelm, M., Syväjärvi, M., Litrico, G., La Via, F.,… Wellmann, P. (2017). Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers. Journal of Crystal Growth, 478, 159-162. https://dx.doi.org/10.1016/j.jcrysgro.2017.09.002
  7. Schuster, M., Groß, S., Roider, F., Maksimenko, I., & Wellmann, P. (2017). Tuning Electrical and Optical Properties of Transparent Conductive Thin Films Using ITO and ZnO Nanoparticles, Sol-Gel-ZnO and Ag Nanowires. International Journal of Nanoparticles and Nanotechnology, 3(013). http://vibgyorpublishers.org/content/ijnn/fulltext.php?aid=ijnn-3-013
  8. Stroth, C., Sayed, M.H., Schuster, M., Ohland, J., Hammer-Riedel, I., Hammer, M.S., Wellmann, P., Parisi, J. & Gütay, L. (2017). Depth-resolved and temperature dependent analysis of phase formation processes in Cu–Zn–Sn–Se films on ZnO substrates. Journal of Materials Science: Materials in Electronics, 1-9. https://dx.doi.org/10.1007/s10854-017-6467-8
  9. Wei, Y., Künecke, U., Jokubavicius, V., Syväjärvi, M., Wellmann, P., & Ou, H. (2017). Low Temperature Photoluminescence of 6H fluorescent SiC. Abstract from E-MRS Spring Meeting 2017, Stasbourg, France
  10. Wei, Y., Künecke, U., Wellmann, P., & Ou, H. (2017). Thermally Stimulated Luminescence in 6H Fluorescent SiC. Abstract from 2017 International Conference on Silicon Carbide and Related Materials , Washington DC, United States.
  11. Wei, Y., Künecke, U., Wellmann, P., & Ou, H. (2017). Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence. Abstract from 5th international workshop on LED and Solar Applications, Kgs. Lyngby, Denmark
  12. Wellmann, P. (2017). Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond. Zeitschrift fur Anorganische und Allgemeine Chemie, 643(21), 1312-1322. https://dx.doi.org/10.1002/zaac.201700270
  13. Wellmann, P. (2017). Materials-Related Solutions for Industry. In Blizzard J, Crabtree G, Oliveira O N, Ewing R, Fu L, Holmes A B, Hynes M, Kaufmann E, Kiriakidis G, Martínez-Duart J M, Raj B, Sriram S, Taub A, Wellmann P (Eds.), MATERIALS INNOVATION FOR THE GLOBAL CIRCULAR ECONOMY AND SUSTAINABLE SOCIETY.
  14. Wilhelm, M., Syväjärvi, M., & Wellmann, P. (2017). Investigation of deep electronic levels in n‐type and p‐type 3C‐SiC using photoluminescence. Advanced Materials Proceedings, 2(12), 769-773. https://dx.doi.org/10.5185/amp.2017/415
  15. Yakimova, R., Ivanov, I.G., Vines, L., Linnarsson, M.K., Gällström, A., Giannazzo, F., Roccaforte, F., Wellmann, , Syväjärvi, M. & Jokubavicius, V. (2017). Growth, defects and doping of 3C-SiC on hexagonal polytypes. ECS Journal of Solid State Science and Technology, 6(10), P741-P745. https://dx.doi.org/10.1149/2.0281710jss

 

2016 (Mit CRIS abgeglichen)

  1. Fahlbusch, L., Schöler, M., Mattle, P., Schnitzer, S., Khodamoradi, H., Iwamoto, N.,… Wellmann, P. (2016). High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C. Materials Science Forum, 858, 33-36. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.33
  2. Schimmel, S., Künecke, U., Meisel, M., Hertweck, B., Steigerwald, T., Nebel, C., Nebel, C., Alt, N., Schlücker, E. & Wellmann, P. (2016). Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitrides. Journal of Crystal Growth, 456, 33-42. https://dx.doi.org/10.1016/j.jcrysgro.2016.08.067
  3. Schuh, P., Vecera, P., Hirsch, A., Syväjärvi, M., Litrico, G., La Via, F.,… Wellmann, P. (2016). Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates. Materials Science Forum, 858, 89-92. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.89
  4. Schuster, M., Wernicke, T., Möckel, S., & Wellmann, P. (2016). Determination of the Molar Extinction Coefficient of Colloidal Selenium for Optical Characterization of Stabilized Nanoparticulate Dispersions. International Journal of Nanoparticles and Nanotechnology, 2:006. http://vibgyorpublishers.org/content/international-journal-of-nanoparticles-and-nanotechnology/ijnn-2-006.pdf
  5. Stroth, C., Sayed, M.H., Schuster, M., Ohland, J., Hammer-Riedel, I., Hammer, M.S.,… Gütay, L. (2016). Depth-resolved and temperature-dependent analysis of phase formation mechanisms in selenized Cu-Zn-Sn precursors by Raman spectroscopy. Journal of Materials Science: Materials in Electronics, 1-9, 506-511. https://dx.doi.org/10.1109/PVSC.2016.7749646
  6. Sun, J., Jokubavicius, V., Gao, L., Booker, I., Jansson, M., Liu, X.,… Syväjärvi, M. (2016). Solar driven energy conversion applications based on 3C-SiC. Materials Science Forum, 858, 1028-1031. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.1028
  7. Syväjärvi, M., Ma, Q., Jokubavicius, V., Galeckas, A., Sun, J., Liu, X., Jansson, M., Wellmann, P., Linnarsson, M., Runde, P., Johansen, B.A., Thøgersen, A., Diplas, S., Almeida Carvalho, P.A., Løvvik, O.M., Wright, D.N., Azarov, A.Y. & Svensson, B.G. (2016). Cubic silicon carbide as a potential photovoltaic material. Solar Energy Materials and Solar Cells, 145, 104-108. https://dx.doi.org/10.1016/j.solmat.2015.08.029
  8. Wellmann, P., Fahlbusch, L., Salamon, M., & Uhlmann, N. (2016). Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditions. Materials Science Forum, 858, 49-52. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.49

 

 

2015 (Mit CRIS abgeglichen)

  1. Hertweck, B., Schimmel, S., Steigerwald, T., Alt, N., Wellmann, P., & Schlücker, E. (2015). Ceramic liner technology for ammonoacidic synthesis. Journal of Supercritical Fluids, 99, 76-87. https://dx.doi.org/10.1016/j.supflu.2015.01.017
  2. Jokubavicius, V., Yazdi, G.R., Liljedahl, R., Ivanov, I.G., Sun, J., Liu, X., Schuh, P., Wilhelm, M., Wellmann, P., Yakimova, R. & Syväjärvi, M. (2015). Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates. Crystal Growth & Design, 15, 2940-2947. https://dx.doi.org/10.1021/acs.cgd.5b00368
  3. Künecke, U., Hetzner, C., Möckel, S., Yoo, H., Hock, R., & Wellmann, P. (2015). Characterization of kesterite thin films fabricated by rapid thermal processing of stacked elemental layers using spatially resolved cathodoluminescence. Thin Solid Films, 582, 387-391. https://dx.doi.org/10.1016/j.tsf.2014.10.063
  4. Möckel, S., Wernicke, T., Arzig, M., Köder, P., Brandl, M., Ahmad, R., Distaso, M., Peukert, W., Hock, R. & Wellmann, P. (2015). Low temperature formation of CuIn1 – xGaxSe2solar cell absorbers by all printed multiple species nanoparticulate Se + Cu-In + Cu-Ga precursors. Thin Solid Films, 582, 60-68. https://dx.doi.org/10.1016/j.tsf.2014.11.060
  5. Rankl, D., Jokubavicius, V., Syväjärvi, M., & Wellmann, P. (2015). Quantitative study on the role of supersaturation during sublimation growth on the yield of 50 mm diameter 3C-SiC. Materials Science Forum, 821-823, 77-80. https://dx.doi.org/10.4028/www.scientific.net/MSF.821-823.77
  6. Schimmel, S., Lindner, M., Steigerwald, T., Hertweck, B., Richter, T.M., Künecke, U., Alt, N., Niewa, R., Schlücker, E. & Wellmann, P. (2015). Determination of GaN solubility in supercritical ammonia with NH4F and NH4Cl mineralizer by in situ x-ray imaging of crystal dissolution. Journal of Crystal Growth, 418, 64-69. https://dx.doi.org/10.1016/j.jcrysgro.2015.02.020
  7. Schuster, M., Distaso, M., Möckel, S., Künecke, U., Peukert, W., & Wellmann, P. (2015). Synthesis of In2Se3 and Cu2-xSe Micro- and Nanoparticles with Microwave-Assisted Solvothermal and Aqueous Redox Reactions for the Preparation and Stabilization of Printable Precursors for a CuInSe2Solar Cell Absorber Layer. Energy Procedia, 84, 62-70. https://dx.doi.org/10.1016/j.egypro.2015.12.296
  8. Wellmann, P., Neubauer, G., Fahlbusch, L., Salamon, M., & Uhlmann, N. (2015). Growth of SiC bulk crystals for application in power electronic devices – process design, 2D and 3D X-ray in situ visualization and advanced doping. Crystal Research and Technology, 50, 2-9. https://dx.doi.org/10.1002/crat.201400216
  9. Wilhelm, M., Beck, F., & Wellmann, P. (2015). Towards the growth of SiGeC epitaxial layers for the application in Si solar cells. Energy Procedia, 84, 236-241. https://dx.doi.org/10.1016/j.egypro.2015.12.319
  10. Wilhelm, M., Rieth, M., Brandl, M., Wibowo, R.A., Hock, R., & Wellmann, P. (2015). Optimization of growth parameters for growth of high quality heteroepitaxial 3C-SiC films at 1200 degrees C. Thin Solid Films, 577, 88-93. https://dx.doi.org/10.1016/j.tsf.2015.01.049
  11. Zweschke, A., & Wellmann, P. (2015). Numerical reactive diffusion modeling of stacked elemental layer rapid thermal annealed chalcopyrite absorber layer formation. Thin Solid Films, 582, 397-400. https://dx.doi.org/10.1016/j.tsf.2014.11.002
  12. Zweschke, A., & Wellmann, P. (2015). Progress on Numerical Reactive Diffusion Modeling of CuInSe2 Phase Formation for Solar Cell Applications. Energy Procedia, 84, 86-92. https://dx.doi.org/10.1016/j.egypro.2015.12.299

 

2014 (Mit CRIS abgeglichen)

  1. Grivickas, V., Gulbinas, K., Jokubavicius, V., Sun, J., Karaliūnas, M., Kamiyama, S., Linnarsson, M., Kaiser, M., Wellmann, P. & Syväjärvi, M. (2014). Carrier Lifetimes and Influence of In-Grown Defects in N-B Co-Doped 6H-SiC. IOP Conference Series : Materials Science and Engineering, 56. https://dx.doi.org/10.1088/1757-899X/56/1/012004
  2. Kaiser, M., Schimmel, S., Jokubavicius, V., Linnarsson, M.K., Ou, H., Syväjärvi, M., & Wellmann, P. (2014). Nucleation and growth of polycrystalline SiC. IOP Conference Series : Materials Science and Engineering, 56. https://dx.doi.org/10.1088/1757-899X/56/1/012001
  3. Neubauer, G., Salamon, M., Uhlmann, N., & Wellmann, P. (2014). Real-time measurement of the evolution of growth facets during SiC PVT bulk growth using 3-D X-ray computed tomography. Materials Science Forum, 778-780, 9-12. https://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.9
  4. Ou, H., Ou, Y., Argyraki, A., Schimmel, S., Kaiser, M., Wellmann, P., Linnarsson, M.K., Jokubavicius, V., Sun, J., Liljedahl, R. & Syväjärvi, M. (2014). Advances in wide bandgap SiC for optoelectronics. European Physical Journal B, 87. https://dx.doi.org/10.1140/epjb/e2014-41100-0
  5. Schimmel, S., Kaiser, M., Jokubavicius, V., Ou, Y., Hens, P., Linnarsson, M.K., Sun, J., Liljedahl, R., Ou, H., Syväjärvi, & Wellmann, P. (2014). The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy. IOP Conference Series : Materials Science and Engineering, 56. https://dx.doi.org/10.1088/1757-899X/56/1/012002
  6. Schimmel, S., Künecke, U., Baser, H.-H., Steigerwald, T., Hertweck, B., Alt, N., Schlücker, E., Schwieger , W. & Wellmann, P. (2014). Towards X-ray in-situ visualization of ammonothermal crystal growth of nitrides. Physica Status Solidi (C) Current Topics in Solid State Physics, 11, 1439-1442. https://dx.doi.org/10.1002/pssc.201300656
  7. Wibowo, R.A., Möckel, S., Yoo, H., Hölzing, A., Hock, R., & Wellmann, P. (2014). Formation of Cu2SnSe3 from stacked elemental layers investigated by combined in situ X-ray diffraction and differential scanning calorimetry techniques. Journal of Alloys and Compounds, 588, 254-258. https://dx.doi.org/10.1016/j.jallcom.2013.10.248

 

2013 (Mit CRIS abgeglichen)

  1. Benz, F., Strunk, H.P., Schaab, J., Künecke, U., & Wellmann, P. (2013). Tuning the emission colour by manipulating terbium-terbium interactions: Terbium doped aluminum nitride as an example system. Journal of Applied Physics, 114(7). https://dx.doi.org/10.1063/1.4818815
  2. Hupfer, T., Hens, P., Kaiser, M., Jokubavicius, V., Syväjärvi, M., & Wellmann, P. (2013). Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy. Materials Science Forum, 740-742, 52-55. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.52
  3. Jokubavicius, V., Kaiser, M., Hens, P., Wellmann, P., Liljedahl, R., Yakimova, R., & Syväjärvi, M. (2013). Morphological and optical stability in growth of fluorescent SiC on low off-axis substrates. Materials Science Forum, 740-742, 19-22. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.19
  4. Kaiser, M., Hupfer, T., Jokubavicius, V., Schimmel, S., Syväjärvi, M., Ou, Y.,… Wellmann, P. (2013). Polycrystalline SiC as source material for the growth of fluorescent SiC layers. Materials Science Forum,740-742, 39-42. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.39
  5. Künecke, U., Hölzing, A., Jost, S., Lechner, R., Vogt, H., Heiß, A.,.Palm, J. & Wellmann, P. (2013). Scanning electron microscopical examination of the impact of laser patterning on microscopic inhomogeneities of Cu(In,Ga)(Se,S)2 absorbers produced by rapid thermal processing. Thin Solid Films, 535(1), 97-101. https://dx.doi.org/10.1016/j.tsf.2012.11.069
  6. Linnarsson, M.K., Kaiser, M., Liljedahl, R., Jokubavicius, V., Ou, Y., Wellmann, P.,… Syväjärvi, M. (2013). Lateral boron distribution in polycrystalline SiC source materials. Materials Science Forum, 740-742, 397-400. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.397
  7. Möckel, S., Hölzing, A., Hock, R., & Wellmann, P. (2013). In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated selenium. Thin Solid Films, 535(1), 133-137. https://dx.doi.org/10.1016/j.tsf.2012.11.081
  8. Neubauer, G., Salamon, M., Roider, F., Uhlmann, N., & Wellmann, P. (2013). Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growth. Materials Science Forum 740-742, 27-30. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.27
  9. Ou, Y., Jokubavicius, V., Kaiser, M., Wellmann, P., Linnarsson, M.K., Yakimova, R.,… Ou, H. (2013). Fabrication of broadband antireflective sub-wavelength structures on fluorescent SiC. Materials Science Forum, 740-742, 1024-1027. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.1024
  10. Schimmel, S., Kaiser, M., Hens, P., Jokubavicius, V., Liljedahl, R., Sun, J.,.Jakimova R., Ou Y., Ou H., Linnarsson M.K., Wellmann P.,.Syväjärvi, M. (2013). Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates. Materials Science Forum, 740-742, 185-188. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.185
  11. Schuster, M., Möckel, S., Wibowo, R.A., Hock, R., & Wellmann, P. (2013). Optimising the parameters for the synthesis of CuIn-nanoparticles by chemical reduction method for chalcopyrite thin film precursors. Materials Research Society Symposium – Proceedings, 1538, 203-208. https://dx.doi.org/10.1557/opl.2013.980
  12. Sun, J., Kamiyama, S., Wellmann, P., Liljedahl, R., Yakimova, R., & Syväjärvi, M. (2013). Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy. Materials Science Forum, 740-742, 315-318. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.315
  13. Wibowo, R.A., Möckel, S., Yoo, H., Hetzner, C., Hölzing, A., Wellmann, P., & Hock, R. (2013). Intermetallic compounds dynamic formation during annealing of stacked elemental layers and its influences on the crystallization of Cu2ZnSnSe4 films. Materials Chemistry and Physics, 142(1), 311-317. https://dx.doi.org/10.1016/j.matchemphys.2013.07.021
  14. Wilhelm, M., Kaiser, M., Jokubavicius, V., Syväjärvi, M., Ou, Y., Ou, H., & Wellmann, P. (2013). Photoluminescence topography of fluorescent SiC and its corresponding source crystals. Materials Science Forum, 740-742, 421-424. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.421
  15. Zheng, Q., Crocco, J., Bensalah, H., Wellmann, P., Osvet, A., Künecke, U., Dierre, F., Vela, O., Perez, J.M. & Dieguez, E. (2013). Influence of the starting materials used in the crystal growth process of CZT for gamma ray radiation applications. Journal of Crystal Growth, 381, 15-21. https://dx.doi.org/10.1016/j.jcrysgro.2013.06.033

 

2012 ((Mit CRIS abgeglichen)

  1. Hens, P., Jokubavicius, V., Liljedahl, R., Wagner, G., Yakimova, R., Wellmann, P., & Syväjärvi, M. (2012). Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds. Materials Letters, 67(1), 300-302. https://dx.doi.org/10.1016/j.matlet.2011.09.109
  2. Hens, P., Müller, J., Spiecker, E., & Wellmann, P. (2012). Defect structures at the silicon/3C-SiC interface. Materials Science Forum, 717-720, 423-426. https://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.423
  3. Hens, P., Müller, J., Wagner, G., Liljedahl, R., Yakimova, R., Spiecker, E.,.Wellmann P., Syväjärvi, M. (2012). Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon. Materials Science Forum, 717-720, 177-180. https://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.177
  4. Hens, P., Wagner, G., Hölzing, A., Hock, R., & Wellmann, P. (2012). Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100). Thin Solid Films, 522, 2-6. https://dx.doi.org/10.1016/j.tsf.2011.10.177
  5. Jokubavicius, V., Hens, P., Liljedahl, R., Sun, J.W., Kaiser, M., Wellmann, P., Sano, S., Yakimova, R., Kamiyama, S. & Syväjärvi, M. (2012). Effects of source material on epitaxial growth of fluorescent SiC. Thin Solid Films, 522, 7-10. https://dx.doi.org/10.1016/j.tsf.2011.10.176
  6. Maksimenko, I., Kilian, D., Mehringer, C., Voigt, M., Peukert, W., & Wellmann, P. (2012). Application of Printable ITO/PEDOT Nanocomposites as Transparent Electrodes in Optoelectronic Devices. Conference on Lasers and Electro-Optics. https://dx.doi.org/10.1364/CLEO_SI.2012.CF3J.2
  7. Ou, Y., Jokubavicius, V., Hens, P., Kaiser, M., Wellmann, P., Yakimova, R., Syväjärvi, M. & Ou, H. (2012). Broadband and omnidirectional light harvesting enhancement of fluorescent SiC. Optics Express, 20(7), 7575-7579. https://dx.doi.org/10.1364/OE.20.007575
  8. Syväjärvi, M., Müller, J., Sun, J.W., Grivickas, V., Ou, Y., Jokubavicius, V., Hens, P., Kaiser, M., Ariyawong, K., Gulbinas, K., Hens, P., Liljedahl, R., Linnarsson, M.K., Kamiyama, S., Wellmann, P., Spiecker, E. & Ou, H. (2012). Fluorescent SiC as a new material for white LEDs. Physica Scripta, T148. https://dx.doi.org/10.1088/0031-8949/2012/T148/014002
  9. Vasiliauskas, R., Marinova, M., Hens, P., Wellmann, P., Syvajarvi, M., & Yakimova, R. (2012). Nucleation Control of Cubic Silicon Carbide on 6H-Substrates. Crystal Growth & Design, 12(1), 197-204. https://dx.doi.org/10.1021/cg200929r

 

2011 (Mit CRIS abgeglichen)

  1. Hens, P., Mueller, J., Fahlbusch, L., Spiecker, E., Wellmann, P., & Spiecker, E. (2011). Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy. Materials Science Forum, 679-680, 127-130. https://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.127
  2. Hölzing, A., Schurr, R., Jost, S., Palm, J., Deseler, K., Wellmann, P., & Hock, R. (2011). The influence of gallium on phase transitions during the crystallisation of thin film absorber materials Cu(In,Ga)(S,Se)(2) investigated by in-situ X-ray diffraction. Thin Solid Films, 519(21), 7197-7200. https://dx.doi.org/10.1016/j.tsf.2010.12.138
  3. Karpinski, H., Sakwe, A., Fried, M.J., Bänsch, E., & Wellmann, P. (2011). Efficient Image Segmentation for Detection of Dislocations in High Resolution Light Microscope Images of SiC Wafers. Materials Science Forum, 679-680, 277-281. https://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.277
  4. Maksimenko, I., Kilian, D., Mehringer, C., Voigt, M., Peukert, W., & Wellmann, P. (2011). Fabrication, charge carrier transport, and application of printable nanocomposites based on indium tin oxide nanoparticles and conducting polymer 3,4-ethylenedioxythiophene/polystyrene sulfonic acid. Journal of Applied Physics, 110. https://dx.doi.org/10.1063/1.3658634
  5. Maksimenko, I., & Wellmann, P. (2011). Low temperature processing of hybrid nanoparticulate Indium Tin Oxide (ITO) polymer layers and application in large scale lighting devices. Thin Solid Films, 519(17), 5744-5747. https://dx.doi.org/10.1016/j.tsf.2010.12.209
  6. Maksimenko, I., & Wellmann, P. (2011). Low-temperature processing of transparent conductive indium tin oxide nanocomposites using polyvinyl derivatives. Thin Solid Films, 520(4), 1341-1347. https://dx.doi.org/10.1016/j.tsf.2011.04.142

 

2010 (Mit CRIS abgeglichen)

  1. Hens, P., Wagner, G., Hölzing, A., Hock, R., & Wellmann, P. (2010). Fundamental study of the temperature ramp-up influence for 3C-SiC hetero-epitaxy on silicon (100). Materials Science Forum, 645-648, 151-154. https://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.151
  2. Hock, R., Konias, K., Perdicaro, L.M.S., Magerl, A., Hens, P., & Wellmann, P. (2010). Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction. Materials Science Forum, 645-648, 29-32. https://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.29
  3. Hölzing, A., Schurr, R., Jost, S., Palm, J., Deseler, K., Hock, R., & Wellmann, P. (2010). Real-Time Investigations on the Formation of CuIn(S,Se)(2) While Annealing Precursors With Varying Sulfur Content. Materials Research Society Symposium – Proceedings, 1165, 25-30. https://dx.doi.org/10.1557/PROC-1165-M02-02
  4. Maksimenko, I., Groß, M., Königer, T., Münstedt, H., & Wellmann, P. (2010). Conductivity and adhesion enhancement in low-temperature processed indium tin oxide/polymer nanocomposites. Thin Solid Films, 518(10), 2910-2915. https://dx.doi.org/10.1016/j.tsf.2009.10.151
  5. Oehlschläger, F., Müller, J., Künecke, U., Hoelzing, A., Schurr, R., Hock, R., & Wellmann, P. (2010). Determination of material inhomogeneities in CuIn(Se,S)(2) solar cell materials by high resolution cathodoluminescence topography. Energy Procedia, 2(1), 183-188. https://dx.doi.org/10.1016/j.egypro.2010.07.026
  6. Tang, K., Künecke, U., Oehlschläger, F., Hölzing, A., Schurr, R., Hock, R., & Wellmann, P. (2010). Differential calorimetry study of the initial stage of the sulphurisation process of CuInSe2 solar cell materials. Solar Energy Materials and Solar Cells, 94(11), 1875-1879. https://dx.doi.org/10.1016/j.solmat.2010.06.002

 

2009 (Mit CRIS abgeglichen)

  1. Groß, M., Linse, N., Maksimenko, I., & Wellmann, P. (2009). Conductance Enhancement Mechanisms of Printable Nanoparticulate Indium Tin Oxide (ITO) Layers for Application in Organic Electronic Devices. Advanced Engineering Materials, 11(4), 295-301. https://dx.doi.org/10.1002/adem.200800292
  2. Hens, P., Künecke, U., Konias, K., Hock, R., & Wellmann, P. (2009). Germanium Incorporation during PVT Bulk Growth of Silicon Carbide. Materials Science Forum, 615-617, 11-14. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.11
  3. Hens, P., Syvaejaervi, M., Oehlschläger, F., Wellmann, P., & Yakimova, R. (2009). P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates. Materials Science Forum, 615-617, 85-88. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.85
  4. Hens, P., Künecke, U., & Wellmann, P. (2009). Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum. Materials Science Forum, 600-603, 19-22. https://dx.doi.org/10.4028/www.scientific.net/MSF.600-603.19
  5. Hölzing, A., Schurr, R., Schäfer, H., Jaeger, A., Jost, S., Palm, J., Deseler K., Wellmann P. & Hock, R. (2009). Sulfo-selenization of metallic thin films of Cu, In and Cu-In. Thin Solid Films, 517(7), 2213-2217. https://dx.doi.org/10.1016/j.tsf.2008.10.089
  6. Oehlschläger, F., Juillaguet, S., Peyre, H., Calmassel, J., & Wellmann, P. (2009). Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity. Materials Science Forum, 615-617, 259-262. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.259
  7. Pons M., Nishizawa S., Wellmann P., Blanquet E., Chaussende D., Dedulle J., & Madar R. (2009). Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling; Materials Science Forum, 600-603, 83-88. https://dx.doi.org/10.4028/www.scientific.net/MSF.600-603.83
  8. Stockmeier, M., Müller, R., Sakwe, A., Wellmann, P., & Magerl, A. (2009). On the lattice parameters of silicon carbide. Journal of Applied Physics, 105(3). https://dx.doi.org/10.1063/1.3074301
  9. Stockmeier, M., Sakwe, A., Hens, P., Wellmann, P., Hock, R., & Magerl, A. (2009). Thermal Expansion Coefficients of 6H Silicon Carbide. Materials Science Forum, 600-603, 517-520. https://dx.doi.org/10.4028/www.scientific.net/MSF.600-603.517
  10. Wellmann, P., Konias, K., Hens, P., Hock, R., & Magerl, A. (2009). In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction. Materials Science Forum, 615-617, 23-26. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.23

 

2008 (Mit CRIS abgeglichen)

  1. Sakwe, A., Stockmeier, M., Hens, P., Müller, R., Queren, D., Künecke, U.,.Konias, K., Hock, R.,. Magerl A., Pons M., Winnacker A. & Wellmann, P. (2008). Bulk growth of SiC – review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution. Physica Status Solidi B-Basic Solid State Physics, 245(7), 1239-1256. https://dx.doi.org/10.1002/pssb.200743520
  2. Steeds, J.W., Sullivan, W., Furkert, S.A., Evans, G.A., & Wellmann, P. (2008). Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC. Physical Review B, 77(19). https://dx.doi.org/10.1103/PhysRevB.77.195203
  3. Wellmann, P., Sakwe, A., Oehlschläger, F., Hoffmann, V., Zeimer, U., & Knauer, A. (2008). Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching. Journal of Crystal Growth, 310(5), 955-958. https://dx.doi.org/10.1016/j.jcrysgro.2007.11.064
  4. Wellmann, P., Müller, R., Sakwe, A., Künecke, U., Hens, P., Stockmeier, M.,… Pons, M. (2008). Bulk growth of SiC. In M. Dudley, C.M. Johnson, A.R. Powell, S. Ryu (Eds.), MRS Proceedings / Volume 1069 / 2008 (pp. 3-14). San Francisco, California, US: Materials Research Society. https://doi.org/10.1557/PROC-1069-D01-01
  5. Welte, A., Waldauf, C., Brabec, C.J., & Wellmann, P. (2008). Application of optical absorbance for the investigation of electronic and structural properties of sol-gel processed TiO2 films. Thin Solid Films, 516(20), 7256-7259. https://dx.doi.org/10.1016/j.tsf.2007.12.025

 

2007 (Mit CRIS abgeglichen)

  1. Bathelt, R., Buchhauser, D., Gärditz, C., Paetzold, R., & Wellmann, P. (2007). Light extraction from OLEDs for lighting applications through light scattering. Organic Electronics, 8(4), 293-299. https://dx.doi.org/10.1016/j.orgel.2006.11.003
  2. Chaussende, D., Wellmann, P., & Pons, M. (2007). Status of SiC bulk growth processes. Journal of Physics D-Applied Physics, 40(20), 6150-6158. https://dx.doi.org/10.1088/0022-3727/40/20/S02
  3. Groß, M., Winnacker, A., & Wellmann, P. (2007). Electrical, optical and morphological properties of nanoparticle indium-tin-oxide layers. Thin Solid Films, 515(24), 8567-8572. https://dx.doi.org/10.1016/j.tsf.2007.03.136
  4. Konias, K., Hock, R., Stockmeier, M., Wellmann, P., Miller, M., Ossege, S., & Magerl, A. (2007). In-situ X-ray measurements of defect generation during PVT growth of SiC. Materials Science Forum, 556-557, 267-270. https://dx.doi.org/10.4028/www.scientific.net/MSF.556-557.267
  5. Sakwe, A., Müller, R., & Wellmann, P. (2007). Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526]. Journal of Crystal Growth, 299(1), 234-234. https://dx.doi.org/10.1016/j.jcrysgro.2006.10.196
  6. Sakwe, A., & Wellmann, P. (2007). Influence of growth temperature on the evolution of dislocations during PVT growth of bulk SiC single crystals. Materials Science Forum, 556-557, 263-266. https://dx.doi.org/10.4028/www.scientific.net/MSF.556-557.263
  7. Sakwe, A., Jang, Y.-S., & Wellmann, P. (2007). Defect etching of non-polar and semi-polar faces in SiC. Materials Science Forum, 556-557, 243-246. https://dx.doi.org/10.4028/www.scientific.net/MSF.556-557.243
  8. Wagner, M., Mustafa, E., Hahn, S., Syväjärvi, M., Yakimova, R., Jang, Y.-S.,… Wellmann, P. (2007). Contactless electrical defect characterization and topography of a-plane grown epitaxial layers. Materials Science Forum, 556-557, 327-330. https://dx.doi.org/10.4028/www.scientific.net/MSF.556-557.327
  9. Wellmann, P., Hens, P., Sakwe, A., Queren, D., Müller, R., Durst, K., & Göken, M. (2007). Impact of n-type versus p-type doping on mechanical properties and dislocation evolution during SiC crystal growth. Materials Science Forum, 556-557, 259-262. https://dx.doi.org/10.4028/www.scientific.net/MSF.556-557.259
  10. Wellmann, P., & Pons, M. (2007). Numerical modeling and experimental verification of modified-PVT crystal growth of SiC. Journal of Crystal Growth, 303(1), 337-341. https://dx.doi.org/10.1016/j.jcrysgro.2006.11.328
  11. Wellmann, P., Karl, U., Kleber, S., & Schmitt, H. (2007). Cathodoluminescence characterization of organic semiconductor materials for light emitting device applications. Journal of Applied Physics, 101(11). https://dx.doi.org/10.1063/1.2743090
  12. Jang, Y.-S., Sakwe, A., Wellmann, P., Juillaguet, S., Peyre, H., Camassel, J., & Steeds, J.W. (2007). Growth and characterization of C-13 enriched 4H-SiC for fundamental materials studies. Materials Science Forum, 556-557, 13-16. https://dx.doi.org/10.4028/www.scientific.net/MSF.556-557.13

 

2006 (Mit CRIS abgeglichen)

  1. Chaussende, D., Wellmann, P., Ucar, M., Pons, M., & Madar, R. (2006). In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging. Materials Science Forum, 527-529, 63-66. https://dx.doi.org/10.4028/www.scientific.net/MSF.527-529.63
  2. Contreras, S., Zielinski, M., Konczewicz, L., Blanc, C., Juillaguet, S., Müller, R., Künecke, U., Wellmann, P., & Camassel, J. (2006) Results of SIMS, temperature-dependent Hall Effect and LTPL measurements performed on Al-doped a-SiC substrates grown by the M-PVT method. Materials Science Forum, 527-529, 633-636. https://doi.org/10.4028/www.scientific.net/MSF.527-529.633
  3. Künecke, U., & Wellmann, P. (2006). Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping. European Physical Journal-Applied Physics, 34(3), 209-213. https://dx.doi.org/10.1051/epjap:2006055
  4. Müller, R., Künecke, U., Thuaire, A., Mermoux, M., Pons, M., & Wellmann, P. (2006). Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering. Physica Status Solidi C: Conferences, 3(3), 558-561. https://dx.doi.org/10.1002/pssc.200564148
  5. Müller, R., Künecke, U., Weingärtner, R., Maier, M., & Wellmann, P. (2006). Anomalous charge carrier transport phenomena in highly aluminum doped SiC. Physica Status Solidi C: Conferences, 3(3), 554-557. https://dx.doi.org/10.1002/pssc.200564150
  6. Müller, R., Künecke, U., Queren, D., Sakwe, A., & Wellmann, P. (2006). Growth of silicon carbide bulk crystals with a modified physical vapor transport technique. Chemical Vapor Deposition, 12(8-9), 557-561. https://dx.doi.org/10.1002/cvde.200606474
  7. Pons, M., Nishizawa, S., Wellmann, P., Blanquet, E., Chaussende, D., & Dedulle, J. (2006). Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling. MRS Proceedings, 911, 0911-B04-02. https://doi.org/10.1557/PROC-0911-B04-02
  8. Püsche, R., Hundhausen, M., Ley, L., Semmelroth, K., Pensl, G., Desperrier, P., Wellmann P., Haller E.E., Ager J., & Starke, U. (2006). Electronic Raman Studies of Shallow Donors in Silicon Carbide. Materials Science Forum, 527-529, 579 584. https://dx.doi.org/10.4028/www.scientific.net/MSF.527-529.579
  9. Sakwe, S., Müller, R., Wellmann, P. (2006). Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC. Cryst. Growth 289 (2), 520-526. https://doi.org/10.1016/j.jcrysgro.2005.11.096
  10. Sakwe, A., Müller, R., Masri, P., & Wellmann, P. (2006). Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals. Physica Status Solidi C: Conferences, 3(3), 562-566. https://dx.doi.org/10.1002/pssc.200564152
  11. Sakwe, A., Müller, R., Queren, D., Künecke, U., & Wellmann, P. (2006). Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiC. Physica Status Solidi (C) Current Topics in Solid State Physics, 3(3), 567-570. https://dx.doi.org/10.1002/pssc.200564153
  12. Topic, I., Sockel, H.-G., Wellmann, P., & Göken, M. (2006). The influence of microstructure on the magnetic properties of WC/Co hardmetals. Materials Science and Engineering A-Structural Materials Properties Microstructure and Processing, 423(1-2), 306-312. https://dx.doi.org/10.1016/j.msea.2006.02.018
  13. Wellmann, P., Queren, D., Müller, R., Sakwe, A., & Künecke, U. (2006). Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC. Materials Science Forum, 527-529, 79-82. https://dx.doi.org/10.4028/www.scientific.net/MSF.527-529.79
  14. Wellmann, P., Müller, R., Queren, D., Sakwe, A., & Pons, M. (2006). Vapor growth of SiC bulk crystals and its challenge of doping. Surface & Coatings Technology, 201(7), 4026-4031. https://dx.doi.org/10.1016/j.surfcoat.2006.08.033
  15. Wellmann, P., Müller, R., & Pons, M. (2006). Modeling and experimental verification of SiC M-PVT bulk crystal growth. Materials Science Forum, 527-529, 75-78. https://dx.doi.org/10.4028/www.scientific.net/MSF.527-529.75
  16. Wellmann, P., & Pons, M. (2006). Silicon carbide CVD for electronic device applications. Chemical Vapor Deposition, 12(8-9), 463-464. https://dx.doi.org/10.1002/cvde.200690018

 

2005 (Mit CRIS abgeglichen)

  1. Wellmann, P., Straubinger, T., Künecke, U., Müller, R., Sakwe, A., Pons, M.,… Camassel, J. (2005). Optical mapping of aluminum doped p-type SiC wafers. Physica Status Solidi A-Applications and Materials Science, 202(4), 598-601. https://dx.doi.org/10.1002/PSSA.200460436
  2. Wellmann, P., Müller, R., Pons, M., Thuaire, A., Crisci, A., Mermoux, M., & Auvray, L. (2005). Micro-optical characterization study of highly p-type doped SiC : Al wafers. Materials Science Forum, 483, 393-396. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.393
  3. Sakwe, A., Herro, Z.G., & Wellmann, P. (2005). Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability. Materials Science Forum, 483, 283-286. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.283
  4. Müller, R., Künecke, U., Weingärtner, R., Schmitt, H., Desperrier, P., & Wellmann, P. (2005). High Al-doping of SiC using a modified PVT (M-PVT) growth set-up. Materials Science Forum, 483, 31-34. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.31
  5. Schmitt, H., Müller, R., Maier, M., Winnacker, A., & Wellmann, P. (2005). Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals. Materials Science Forum, 483, 445-448. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.445
  6. Wellmann, P., Straubinger, T., Desperrier, P., Müller, R., Künecke, U., Sakwe, A.,… Pons, M. (2005). Modified physical vapor transport growth of SiC – Control of gas phase composition for improved process conditions. Materials Science Forum, 483, 25-30. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.25
  7. Wellmann, P., Desperrier, P., Müller, R., Straubinger, T., Winnacker, A., Baillet, F.,… Pons, M. (2005). SiC single crystal growth by a modified physical vapor transport technique. Journal of Crystal Growth, 275(1-2), E555-E560. https://dx.doi.org/10.1016/j.jcrysgro.2004.11.070
  8. Pons, M., Blanquet, E., Dedulle, J., Ucar, M., Wellmann, P., Danielsson, Ö.,… Madar, R. (2005). Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes. Materials Science Forum, 483, 3-8. https://dx.doi.org/10.4028/www.scientific.net/MSF.483-485.3
  9. Pons, M., Nishizawa, S.-I., Wellmann, P., Ucar, M., Blanquet, E., Dedulle, J.,… Madar, R. (2005). Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics. ECS Transactions, 2005-9, 1-12. (Keine DOI vorhanden)
  10. Wellmann, P., Herro, Z.G., Winnacker, A., Püsche, R., Hundhausen, M., Masri, P.,… Makarov, Y. (2005). In situ visualization of SiC physical vapor transport crystal growth. Journal of Crystal Growth, 275(1-2), e1807–e1812. https://dx.doi.org/10.1016/j.jcrysgro.2004.11.253
  11. Wellmann, P. (2005). Additional pipework opens up transistor applications for SiC. Compound Semiconductor, 11(2), 23-2 (Keine DOI vorhanden)

 

2004 (Mit CRIS abgeglichen)

  1. Desperrier, P., Müller, R., Winnacker, A., & Wellmann, P. (2004). Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source. Materials Science Forum, 457-460, 727-730. https://dx.doi.org/10.4028/www.scientific.net/MSF.457-460.727
  2. Müller, R., Desperrier, P., Seitz, C., Weißer, M., Magerl, A., Maier, M. Winnacker A. & Wellmann, P. (2004). In-situ Er-doping of SiC bulk single crystals. Materials Science Forum, 457-460, 723-726. https://dx.doi.org/10.4028/www.scientific.net/MSF.457-460.723
  3. Weingärtner, R., Wellmann, P., & Winnacker, A. (2004). On the origin of the below band-gap absorption bands in n-type (N) 4H-and 6H-SiC. Materials Science Forum, 457-460, 645-648. https://dx.doi.org/10.4028/www.scientific.net/MSF.457-460.645
  4. Weißer, M., Seitz, C., Wellmann, P., Hock, R., & Magerl, A. (2004). Structural defects in SiC crystals investigated by high energy x-ray diffraction. Materials Science Forum, 457-460, 339-342. https://dx.doi.org/10.4028/www.scientific.net/MSF.457-460.339
  5. Wellmann, P., Albrecht, A., Künecke, U., Birkmann, B., Müller, G., & Jurisch, M. (2004). Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping. European Physical Journal-Applied Physics, 27(1-3), 357-361. https://dx.doi.org/10.1051/epjap:200404
  6. Wellmann, P., Herro, Z.G., Sakwe, A., Masri, P., Bogdanov, M., Karpov, S., Kulik A., Ramm M. & Makarov, Y. (2004). Analysis of graphitization during physical vapor transport growth of silicon carbide. Materials Science Forum, 457-460, 55-58. https://dx.doi.org/10.4028/www.scientific.net/MSF.457-460.55

 

2003 (Mit CRIS abgeglichen)

  1. Weingärtner, R., Bickermann, M., Herro, Z.G., Künecke, U., Sakwe, A., Wellmann, P., & Winnacker, A. (2003). Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC. Materials Science Forum, 433-436, 333-336. https://dx.doi.org/10.4028/www.scientific.net/MSF.433-436.333
  2. Bickermann, M., Weingärtner, R., Herro, Z.G., Hofmann, H.-D., Künecke, U., Wellmann, P., & Winnacker, A. (2003). Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals. Materials Science Forum, 433-436, 337-340. https://dx.doi.org/10.4028/www.scientific.net/MSF.433-436.337
  3. Weingärtner, R., Albrecht, A., Wellmann, P., & Winnacker, A. (2003). Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC. Materials Science Forum, 433-436, 341-344. https://dx.doi.org/10.4028/www.scientific.net/MSF.433-436.341
  4. Wellmann, P., Herro, Z.G., Selder, M., Durst, F., Püsche, R., Hundhausen, M.,… Winnacker, A. (2003). Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling. Materials Science Forum, 433-436, 9-12. https://dx.doi.org/10.4028/www.scientific.net/MSF.433-436.9
  5. Herro, Z.G., Wellmann, P., Püsche, R., Hundhausen, M., Ley, L., Maier, M.,… Winnacker, A. (2003). Investigation of mass transport during PVT growth of SiC by 13C labeling of source material. Journal of Crystal Growth, 258, 261-267. https://dx.doi.org/10.1016/S0022-0248(03)01538-0
  6. Wellmann, P., & Weingärtner, R. (2003). Determination of doping levels and their distribution in SiC by optical techniques. Materials Science and Engineering B-Advanced Functional Solid-State Materials, 102(1-3), 262-268. https://dx.doi.org/10.1016/S0921-5107(02)00707-9

 

2002 (Mit CRIS abgeglichen)

  1. Birkmann, B., Weingärtner, R., Wellmann, P., Wiedemann, B., & Müller, G. (2002). Analysis of silicon incorporation into VGF-grown GaAs. Journal of Crystal Growth, 237, 345-349. https://dx.doi.org/10.1016/S0022-0248(01)01935-2
  2. Straubinger, T., Bickermann, M., Rasp, M., Weingärtner, R., Wellmann, P., & Winnacker, A. (2002). Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method. Materials Science Forum, 389-393, 131-134. https://dx.doi.org/10.4028/www.scientific.net/MSF.389-393.131
  3. Straubinger, T., Bickermann, M., Weingärtner, R., Wellmann, P., & Winnacker, A. (2002). Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method. Journal of Crystal Growth, 240(1-2), 117-123. https://dx.doi.org/10.1016/S0022-0248(02)00917-X
  4. Weingärtner, R., Wellmann, P., Bickermann, M., Hofmann, H.-D., Straubinger, T., & Winnacker, A. (2002). Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements. Applied Physics Letters, 80(1), 70-72. https://dx.doi.org/10.1063/1.1430262
  5. Wellmann, P., Weingärtner, R., Bickermann, M., Straubinger, T., & Winnacker, A. (2002). Optical quantitative determination of doping levels and their distribution in SiC. Materials Science and Engineering B-Advanced Functional Solid-State Materials, 91, 75-78. https://dx.doi.org/10.1016/S0921-5107(01)00976-X
  6. Wellmann, P., Herro, Z.G., Straubinger, T., & Winnacker, A. (2002). ‘In situ synthesis’ of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging. Materials Science Forum, 389-393, 91-94. https://dx.doi.org/10.4028/www.scientific.net/MSF.389-393.91

 

2001 (Mit CRIS abgeglichen)

  1. Weingärtner, R., Bickermann, M., Bushevoy, S., Hofmann, H.-D., Rasp, M., Straubinger, T., Wellmann, P. & Winnacker, A. (2001). Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC. Materials Science and Engineering B-Advanced Functional Solid-State Materials, 80(1-3), 357-361. https://dx.doi.org/10.1016/S0921-5107(00)00599-7
  2. Wellmann, P., Bushevoy, S., & Weingärtner, R. (2001). Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements. Materials Science and Engineering B-Advanced Functional Solid-State Materials, 80(1-3), 352-356. https://dx.doi.org/10.1016/S0921-5107(00)00598-5
  3. Weingärtner, R., Bickermann, M., Hofmann, H.-D., Rasp, M., Straubinger, T., Wellmann, P., & Winnacker, A. (2001). Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC. Materials Science Forum, 353-356, 397-400. https://dx.doi.org/10.4028/www.scientific.net/MSF.353-356.397
  4. Bickermann, M., Hofmann, H.-D., Rasp, M., Straubinger, T., Weingärtner, R., Wellmann, P., & Winnacker, A. (2001). Study of boron incorporation during PVT growth of p-type SiC crystals. Materials Science Forum, 353-356, 49-52. https://dx.doi.org/10.4028/www.scientific.net/MSF.353-356.49
  5. Straubinger, T., Bickermann, M., Hofmann, H.-D., Weingärtner, R., Wellmann, P., & Winnacker, A. (2001). Stability criteria for 4H-SiC bulk growth. Materials Science Forum, 353-356, 25-28. https://dx.doi.org/10.4028/www.scientific.net/MSF.353-356.25
  6. Straubinger, T., Wellmann, P., & Winnacker, A. (2001). Investigation of a PVT SiC-growth set-up modified by an additional gas flow. Materials Science Forum, 353-356, 33-36. https://dx.doi.org/10.4028/www.scientific.net/MSF.353-356.33
  7. Hofmann, H.-D., Bickermann, M., Ebling, D., Epelbaum, B., Kadinski, L., Selder, M., Straubinger, T., Weingärtner, R., Wellmann, P. & Winnacker, A. (2001). SiC crystal growth from the vapor and liquid phase. Materials Research Society Symposium – Proceedings, 640. https://dx.doi.org/10.1557/PROC-640-H1.1
  8. Bickermann, M., Hofmann, H.-D., Straubinger, T., Weingärtner, R., Wellmann, P., & Winnacker, A. (2001). On the preparation of semi-insulating SiC bulk crystals by the PVT technique. Applied Surface Science, 184(1-4), 84-89. https://dx.doi.org/10.1016/S0169-4332(01)00481-0
  9. Selder, M., Kadinski, L., Durst, F., Straubinger, T., Wellmann, P., & Hofmann, H.-D. (2001). Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystals. Materials Science Forum, 353-356, 65-68. https://dx.doi.org/10.4028/www.scientific.net/MSF.353-356.65
  10. Wellmann, P., Hofmann, H.-D., Kadinski, L., Selder, M., Straubinger, T., & Winnacker, A. (2001). Impact of source material on silicon carbide vapor transport growth process. Journal of Crystal Growth, 225(2-4), 312-316. https://dx.doi.org/10.1016/S0022-0248(01)00881-8
  11. Wellmann, P., Hofmann, H.-D., Kadinski, L., Selder, M., Straubinger, T., & Winnacker, A. (2001). Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process. Materials Science Forum, 353-356, 11-14. https://dx.doi.org/10.4028/www.scientific.net/MSF.353-356.11

 

2000 (Mit CRIS abgeglichen)

  1. Selder, M., Kadinski, L., Makarov, Y., Durst, F., Wellmann, P., Straubinger, T.,… Ramm, M. (2000). Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT. Journal of Crystal Growth, 211(1), 333-338. https://dx.doi.org/10.1016/S0022-0248(99)00853-2
  2. Selder, M., Kadinski, L., Durst, F., Straubinger, T., Hofmann, H.-D., & Wellmann, P. (2000). Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth. Materials Science Forum, 338-342, 31-34. https://dx.doi.org/10.4028/www.scientific.net/MSF.338-342.31
  3. Wellmann, P., Bickermann, M., Hofmann, H.-D., Kadinski, L., Selder, M., Straubinger, T., & Winnacker, A. (2000). In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging. Journal of Crystal Growth, 216(1-4), 263-272. https://dx.doi.org/10.1016/S0022-0248(00)00372-9
  4. Wellmann, P., Bickermann, M., Hofmann, H.-D., Kadinski, L., Selder, M., Straubinger, T., & Winnacker, A. (2000). Digital x-ray imaging of SiCPVT process: Analysis of crystal growth and powder source degradation. Materials Science Forum, 338-342, 71-74. https://dx.doi.org/10.4028/www.scientific.net/MSF.338-342.71
  5. Straubinger, T., Bickermann, M., Grau, M., Hofmann, H.-D., Kadinski, L., Müller, G., Selder, M., Wellmann, P. & Winnacker, A. (2000). Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions. Materials Science Forum, 338-342, 39-42. https://dx.doi.org/10.4028/www.scientific.net/MSF.338-342.39

 

1999 (Mit CRIS abgeglichen)

  1. Hofmann, H.-D., Schmitt, E., Bickermann, M., Kölbl, M., Wellmann, P., & Winnacker, A. (1999). Analysis on defect generation during the SiC bulk growth process. Materials Science and Engineering B-Advanced Functional Solid-State Materials, B61-62, 48-53. https://dx.doi.org/10.1016/S0921-5107(98)00443-7
  2. Wellmann, P., Bickermann, M., Grau, M., Hofmann, H.-D., Straubinger, T., & Winnacker, A. (1999). Online monitoring of PVT SiC bulk crystal growth using digital x-ray imaging. Materials Research Society Symposium – Proceedings, 572, 259-264. https://dx.doi.org/10.1557/PROC-572-259

 

1998 (Mit CRIS abgeglichen)

  1. Garcia, J., Mankad, T., Holtz, O., Wellmann, P., & Petroff, P. (1998). Electronic states tuning of InAs self-assembled quantum dots. Applied Physics Letters, 72(24), 3172-3174. https://dx.doi.org/10.1063/1.121583
  2. Wellmann, P., Schoenfeld, W., Garcia, J., & Petroff, P. (1998). Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique. Journal of Electronic Materials, 27(9), 1030-1033. https://dx.doi.org/10.1007/s11664-998-0158-4
  3. Schmidt, K., Kunze, U., Medeiros-Ribeiro, G., Garcia, J., Wellmann, P., & Petroff, P. (1998). Field dependent carrier dynamics and charged excitons in InAs self-assembled quantum dots. Physica E-Low-Dimensional Systems & Nanostructures, 2(1-4), 627-631. https://dx.doi.org/10.1016/S1386-9477(98)00128-3
  4. Wellmann, P., Garcia, J., Feng, J.-L., & Petroff, P. (1998). Giant magnetoresistance in a low-temperature GaAs/MnAs nanoscale ferromagnet hybrid structure. Applied Physics Letters, 73(22), 3291-3293. https://dx.doi.org/10.1063/1.122748

 

1997 (Mit CRIS abgeglichen)

  1. Wellmann, P., Feng, J.-L., Garcia, J., & Petroff, P. (1997). Formation and properties of nanosize ferromagnetic MnAs particles in low temperature GaAs by manganese implantation. Materials Research Society Symposium – Proceedings, 475, 49-54. https://dx.doi.org/10.1557/PROC-475-49
  2. Wellmann, P., Garcia, J., Feng, J.-L., & Petroff, P. (1997). Formation of nanoscale ferromagnetic MnAs crystallites in low-temperature grown GaAs. Applied Physics Letters, 71(17), 2532-2534. https://dx.doi.org/10.1063/1.120109
  3. Van Esch, A., Van Bockstal, L., De Boeck, J., Verbanck, G., Van Steenbergen, A., Wellmann, P.,… Borghs, G. (1997). Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs. Physical Review B, 56(20), 13103-13112 (Keine DOI)

 

1996 (Mit CRIS abgeglichen)

  1. Wellmann, P., Winnacker, A., & Pensl, G. (1996). On the excitation mechanism of erbium and ytterbium in the quaternary compounds InGaAsP. Materials Research Society Symposium – Proceedings, 422, 255-266. https://dx.doi.org/10.1557/PROC-422-255

 

1995 (Mit CRIS abgeglichen)

  1. Burchard, A., Deicher, M., Forkel-Wirth, D., Freidinger, J., Kerle, T., Magerle, R.,… Winnacker, A. (1995). Acceptor-hydrogen interaction in ternary III-V semiconductors. Materials Science Forum, 196-201, 987-991. https://dx.doi.org/10.4028/www.scientific.net/MSF.196-201.987